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Si4914BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A) a Q g (Typ.)
? Halogen-free According to IEC 61249-2-21
Definition
Channel-1
Channel-2
30
0.021 at V GS = 10 V
0.027 at V GS = 4.5 V
0.020 at V GS = 10 V
0.025 at V GS = 4.5 V
8.4
7.4
8 d
8 d
6.7
7.0
? LITTLE FOOT ? Plus Integrated Schottky
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
? Notebook PC
- System Power dc-to-dc
V DS (V)
30
V SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
I F (A)
2.0
D 1
SO-8
G 1
D 1
1
8
G 1
N-Channel 1
D 1
G 2
S 2
2
3
4
7
6
5
S 1 /D 2
S 1 /D 2
S 1 /D 2
MOSFET
S 1 /D 2
Schottky Diode
G 2
Top View
Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 2
MOSFET
S 2
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Channel-1
8.4
30
20
Channel-2
8 d
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
6.7
6.7 b, c
5.3 b, c
7.4
7.4 b, c
5.7 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
40
40
A
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
T C = 25 °C
T A = 25 °C
L = 0.1 mH
T C = 25 °C
I S
I SM
I AS
E AS
2.4
1.0 b, c
40
2.7
15
11.2
2.8
1.1 b, c
40
3.1
mJ
1.7
Maximum Power Dissipation a, b
T C = 70 °C
T A = 25 °C
P D
1.7
b, c
2.0
2.0 b, c
W
T A = 70 °C
1.1 b, c
1.2 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Package limited.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
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